Photocurrent Generation Mechanisms in Molybdenum‐Contacted Semiconducting Black Phosphorus and Contributions from the Photobolometric Effect

An analysis of the optoelectronic properties and photocurrent generation mechanisms in 2D multilayer crystallites black phosphorus (BP) is conducted from 350 K down to cryogenic temperatures T ≈6 using a broad‐band white light source, results are compared another semiconducting van der Waals solid, MoS 2 . Both BP devices contacted with Mo at bottom as electrode metal. The Mo–BP interface yields low Schottky barrier ≈ −28.3 meV high photoresponsivity R ≈2.43 × 10 5 A W −1 source‐drain bias voltage ≈0.5 V (300 K, incident optical power ≈3.16 μW cm −2 ). This article first highlight empirical use contact metal BP. attributed interfaces, conjunction large effective area architecture that increases collection photoexcited carriers reduces thermal dissipation into substrate largely suspended nanodiaphragm. show promise potentially advance thermoelectric stemming this monoelemental, direct bandgap solid.